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An accurate power-MOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE-2 software and MOSFET terminal measurements. SPICE-2 is the circuit simulation package of choice for this work because of its universal availability, despite its inherent limitations. These limitations are circumvented through circuit means.
This effort models power-MOSFET terminal behavior consistent with SPICE-2 limitations; hence it will differ from the physical model as suggested by Wheatley, Ronan and others. We feel we have advanced prior efforts particularly in areas of third-quadrant operations, avalanche-mode simulation, switching waveforms and diode recovery waveforms.