Simucad Releases LDMOS and HV MOS Compact SPICE Models (Simucad)

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Santa Clara CA, March 15, 2006 - Simucad Design Automation Inc., a leading provider of electronic design automation (EDA) software tools, announced today the availability of LDMOS and HV MOS Compact SPICE Models for its SmartSpice analog simulator and SmartSpiceRF Harmonic-based simulator. LDMOS is based on the Philips’ LDMOS compact model and HV MOS compact model is based on the popular BSIM3 from the University of California at Berkeley.

“There is no need to use cumbersome macro-models for LDMOS and high voltage MOS transistors,” said Dr. Ivan Pesic, CEO of Simucad. “These compact models and our single-vendor circuit simulation environment provide unmatched accuracy, scalability, convergence and performance in designing power, power management and panel driver circuits.”

The high voltage analog and RF IC design communities have been waiting for years for compact models that can accurately and efficiently simulate the behavior of LDMOS, VDMOS, EDMOS and other high voltage MOS transistors. The Simucad LDMOS and HV MOS models finally address these critical requirements.

The LDMOS and HV MOS models are accurate and scalable over a wide range of geometries, biases and temperatures using one single model card. They also provide accurate modeling of both symmetrical and asymmetrical, bias dependent parasitic effects.

Simucad Implementation of LDMOS Compact Model
Simucad LDMOS high-voltage compact model includes physical effects for both channel region and drift region under the gate and is suitable to simulate Lateral (LDMOS), Vertical Double-diffused (VDMOS) as well as Extended-drain (EDMOS) devices. This model accounts for the channel and drift regions, and computes the voltage at which the transition occurs internally. Simucad enhancements to the basic model improve accuracy, convergence and scalability of self-heating, quasi-saturation, and the capacitance model. The model was coded to be thread-safe in multi-processor operation and provides additional analyses for Transient Noise and RF noise analyses.

Simucad Implementation of HVMOS Compact Model
Simucad HV MOS high-voltage compact model is an extension of the industry-standard BSIM3v3 model. This model is suitable to simulate Vertical Double-diffused (VDMOS) and any other high-voltage MOS devices. The core parameter set is based on a final version of BSIM3v3 and ensures good continuity in the drain current equation and stable convergence. Simucad added additional parameters that are easily extracted by modeling engineers. These parameters account for bias dependency of asymmetric source and drain parasitics, mobility reduction due to drain voltage, dependency of velocity saturation on both gate and drain voltages and self-heating.

Availability and Pricing
These models are available for download on Simucad’s customer website as part of its complete circuit simulation environment consisting of SmartSpice Analog Simulator, SmartSpiceRF Harmonic Balance-based Simulator, and Harmony Mixed-Signal Simulator. There is no additional fee for Simucad customers who have perpetual licenses under maintenance or have active time-based licenses.

Simucad also provides turnkey SPICE model extraction services in its state-of-the-art laboratory.

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