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Power devices are increasingly important and more complex, often using wide bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). The need for high voltage, high power, and fast switching devices operating in harsh environments require accurate design and performance optimization for both device and circuit operation. The best solution is complete integration from process flow to circuit design including device characterization and SPICE parameter extraction. Key enabling technologies for wide bandgap semiconductors include extended precision numerics, 3D process/device simulation, and new compact models for power devices. This paper describes an integrated solution based on Silvaco's TCAD and EDA software within the Virtual Wafer Fab (VWF) environment.